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Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten
Fang, Jingzhong1; Liu, Lixia2; Gao, Ning3,4; Hu, Wangyu2; Deng, Huiqiu1
Corresponding AuthorGao, Ning(ning.gao@sdu.edu.cn) ; Deng, Huiqiu(hqdeng@hnu.edu.cn)
2021-09-28
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume130Issue:12Pages:9
AbstractIn the fusion environment, a complex stress field is generated in materials, which affects the evolution of radiation defects. In this study, the behaviors of radiation-induced defects under the effect of stress gradient field in tungsten are carefully simulated at the atomic scale with the molecular dynamics (MD) method. It was found that the stress gradient field affects the migration properties of interstitial defects, resulting in the energy barriers changing with the stress and stress gradient. In the axial stress gradient field, the movement of the 1/2 < 111 > interstitial dislocation loop is significantly accelerated, and it tends to move toward the region where the stress is concentrated. Within the time scale of the classical MD simulation, the stress gradient has little effect on the migration of vacancies. These results suggested that the stress gradient would cause interstitial defects to accumulate to the region where the stress is concentrated, thereby significantly changing the properties of the tungsten materials.& nbsp;Published under an exclusive license by AIP Publishing.
DOI10.1063/5.0059748
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[12075141] ; National Natural Science Foundation of China[11375242] ; National Natural Science Foundation of China[51771073] ; National Natural Science Foundation of China[11675230]
WOS Research AreaPhysics
WOS KeywordPLASMA-FACING COMPONENTS ; INTERATOMIC POTENTIALS ; AB-INITIO ; MICROSTRUCTURAL DEVELOPMENT ; NEUTRON-IRRADIATION ; RE ; HE ; INTERSTITIALS ; VACANCIES ; CLUSTERS
WOS SubjectPhysics, Applied
WOS IDWOS:000724607700002
PublisherAIP Publishing
Funding OrganizationNational Natural Science Foundation of China
Citation statistics
Document Type期刊论文
Identifierhttp://119.78.100.186/handle/113462/142475
Collection中国科学院近代物理研究所
Corresponding AuthorGao, Ning; Deng, Huiqiu
Affiliation1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Peoples R China
2.Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Peoples R China
3.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao, Peoples R China
4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat MOE, Qingdao, Peoples R China
5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
Recommended Citation
GB/T 7714
Fang, Jingzhong,Liu, Lixia,Gao, Ning,et al. Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten[J]. JOURNAL OF APPLIED PHYSICS,2021,130(12):9.
APA Fang, Jingzhong,Liu, Lixia,Gao, Ning,Hu, Wangyu,&Deng, Huiqiu.(2021).Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten.JOURNAL OF APPLIED PHYSICS,130(12),9.
MLA Fang, Jingzhong,et al."Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten".JOURNAL OF APPLIED PHYSICS 130.12(2021):9.
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